美國專利
No.Patent NameCountryPatent No.
1 TRENCH MOSFET HAVING A TOP SIDE DRAIN US 8,889,514
2 TRENCH MOSFET WITH TRENCHED FLOATING GATES HAVING THICK TRENCH BOTTOM OXIDE AS TERMINATION US 8,889,513
3 FAST SWITCHING SUPER-JUNCTION TRENCH MOSFETS US 8,829,607
4 HIGH SWITCHING TRENCH MOSFET US 8,907,415
5 LOW Qgd TRENCH MOSFET INTEGRATED WITH SCHOTTKY RECTIFIER(CIP) US 8,653,589
6 TRENCH MOSFET HAVING SHIELDED ELECTRODE INTEGRATED WITH TRENCH SCHOTTKY REFTIFIER US 8,274,113
7 SHIELDED RENCH MOSFET WITH MULTIPLE TRENCHED FLOATING GATES AS TERMINATON US 8,643,092
8 TRENCH MOSFET WITH TRENCHED FLOATING GATES IN TERMINATION US 8,564,052
9 TRENCH MOSFET WITH TRENCHED FLOATING GATES HAVING THICK TRENCH BOTTOM OXIDE AS TERMINATON US 8,525,255
10 POWER SEMICONDUCTOR DEVICES INTEGRATED WITH CLAMP DIODES HAVING SEPARATED GATE METAL PADS TO AVOID BBREAKDOWN VOLTAGE DEGRADATION US 8,378,411
11 SHIELDED GATE MOSFET-SCHOTTKY RECTIFIER-DIODE INTEGRATED CIRCUITS WITH TRENCH CONTACT STRUCTURES US 8,816,348
12 TRENCH MOSFET WITH BODY REGION HAVING CONCAVE-ARC SHAPE US 8,378,392
13 Method Of Manufacturing Trench Mosfet Structures Using Three Maks Process US 8,530,313
14 A Semiconductor Power Device With Embedded Diodes And Resistors Using Reduced Mask Processes US 8,569,780
15 Semiconductor Power Devices Integrated With Trenched Clamp Diode US 8,564,047
16 Semiconductor power device having shielded gate structure and ESD clamp diode manufactured with less mask process
US 9,953,969
17 A Semiconductor Power Device Integrated With Esd Clamp Diodes Having Improved Esd Layouts And Device US 8,466,514
18 FAST SWITCHING LATERAL INSULATED GATE BIPOLAR TRANSISTOR (LIGBT) WITH TRENCHED CONTACTS US 8,253,164
19 TRENCH MOSFET WITH ULTRA HIGH CELL DENSITY AND MANUFACTURE THEREOF US 8,178,922
20 AVALANCHE CAPABILITY IMPROVEMENT IN POWER SEMICONDUCTOR DEVICES US 8,264,035