No. | Patent Name | Country | Patent No. |
1 |
TRENCH MOSFET HAVING A TOP SIDE DRAIN |
US |
8,889,514 |
2 |
TRENCH MOSFET WITH TRENCHED FLOATING GATES HAVING THICK TRENCH BOTTOM OXIDE AS TERMINATION |
US |
8,889,513 |
3 |
FAST SWITCHING SUPER-JUNCTION TRENCH MOSFETS |
US |
8,829,607 |
4 |
HIGH SWITCHING TRENCH MOSFET |
US |
8,907,415 |
5 |
LOW Qgd TRENCH MOSFET INTEGRATED WITH SCHOTTKY RECTIFIER(CIP) |
US |
8,653,589 |
6 |
TRENCH MOSFET HAVING SHIELDED ELECTRODE INTEGRATED WITH TRENCH SCHOTTKY REFTIFIER |
US |
8,274,113 |
7 |
SHIELDED RENCH MOSFET WITH MULTIPLE TRENCHED FLOATING GATES AS TERMINATON |
US |
8,643,092 |
8 |
TRENCH MOSFET WITH TRENCHED FLOATING GATES IN TERMINATION |
US |
8,564,052 |
9 |
TRENCH MOSFET WITH TRENCHED FLOATING GATES HAVING THICK TRENCH BOTTOM OXIDE AS TERMINATON |
US |
8,525,255 |
10 |
POWER SEMICONDUCTOR DEVICES INTEGRATED WITH CLAMP DIODES HAVING SEPARATED GATE METAL PADS TO AVOID BBREAKDOWN VOLTAGE DEGRADATION |
US |
8,378,411 |
11 |
SHIELDED GATE MOSFET-SCHOTTKY RECTIFIER-DIODE INTEGRATED CIRCUITS WITH TRENCH CONTACT STRUCTURES |
US |
8,816,348 |
12 |
TRENCH MOSFET WITH BODY REGION HAVING CONCAVE-ARC SHAPE |
US |
8,378,392 |
13 |
Method Of Manufacturing Trench Mosfet Structures Using Three Maks Process |
US |
8,530,313 |
14 |
A Semiconductor Power Device With Embedded Diodes And Resistors Using Reduced Mask Processes |
US |
8,569,780 |
15 |
Semiconductor Power Devices Integrated With Trenched Clamp Diode |
US |
8,564,047 |
16 |
Semiconductor power device having shielded gate structure and ESD clamp diode manufactured with less mask process
|
US |
9,953,969
|
17 |
A Semiconductor Power Device Integrated With Esd Clamp Diodes Having Improved Esd Layouts And Device |
US |
8,466,514 |
18 |
FAST SWITCHING LATERAL INSULATED GATE BIPOLAR TRANSISTOR (LIGBT) WITH TRENCHED CONTACTS |
US |
8,253,164 |
19 |
TRENCH MOSFET WITH ULTRA HIGH CELL DENSITY AND MANUFACTURE THEREOF |
US |
8,178,922 |
20 |
AVALANCHE CAPABILITY IMPROVEMENT IN POWER SEMICONDUCTOR DEVICES |
US |
8,264,035 |
|