公司簡介
美國專利-3
| No. | Patent Name | Country | Patent No. |
|---|---|---|---|
| 1 | SUPER-JUNCTION TRENCH MOSFET WITH MULTIPLE TRENCHED GATES IN UNIT CELL | US | 8,564,058 |
| 2 | TRENCH MOSFET WITH RESURG STEPPED OXIDE AND DIFFUSED DRIFT REGION | US | 8,587,054 |
| 3 | Super-Junction Trench Mosfet With Resurf Stepped Oxides And Trenched Contacts | US | 8,373,224 |
| 4 | Method For Manufacturing A Siper-junction Trench Mosfet With Resurf Stepped Oxides And Trenched Cont | US | 8,372,717 |
| 5 | MSD integrated circuits with shallow trench | US | 8,101,993 |
| 6 | SEMICONDUCTOR POWER DEVICE INTEGRATED WITH ESD PROTECTION DIODES | US | 8,658,492 |
| 7 | SUPER-JUNCTION TRENCH MOSFET WITH RESURF STEPPED OXIDES AND SPLIT GATE ELECTRODES | US | 8,373,225 |
| 8 | SEMICONDUCTOR POWER DEVICE HAVING IMPROVED TERMINATION STRUCTURE FOR MASK SAVING | US | 8,614,482 |
| 9 | SUPER-JUNCTION TRENCH MOSFET WITH MULTIPLE TRENCHED SOURCE-BODY CONTACTS | US | 8,648,413 |
| 10 | TRENCH MOSFET HAVING A TOP SIDE DRAIN | US | 8,653,587 |
| 11 | TRENCH MOSFET WITH TRENCHED FLOATING GATES AND TRENCHED CHANNEL STOP GATES IN TERMINATION | US | 8,519,477 |
| 12 | Super-junction trench Mosfets with closed cell layout |
US | 9,377,328 |
| 13 | TRENCH MOSFET WITH TRENCHED FLOATING GATES IN TERMINATION | US | 8,564,053 |
| 14 | TRENCH MOSFET WITH ULTRA HIGH CELL DENSITY AND MANUFACTURE THEREOF | US | 8,652,900 |
| 15 | Trench MOSFET with ESD Zener diode | US | 8,004,009 |
| 16 | Super-junction trench Mosfets with closed cell layout having shielded gate |
US | 9,412,810 |
| 17 | Trench Mosfet with shielded gate and diffused drift region |
US | 9,530,882 |
| 18 | Integrated trench MOSFET and junction barrier schottky rectifier with trench contact structures | US | 7,626,231 |
| 19 | Trenched MOSFET with trenched source contact | US | 7,629,634 |
| 20 | Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid b | US | 8,148,773 |