公司簡介
美國專利-4
| No. | Patent Name | Country | Patent No. |
|---|---|---|---|
| 1 | Trench MOSFET with trench floating gatcs as tcrmination | US | 7,989,887 |
| 2 | Trench IGBT with trench gates underneath contact areas of protection diodes | US | 7,897,997 |
| 3 | Trench MOSFET with trench gates underneath contact areas of ESD diode for prevention of gate and sou | US | 7,956,410 |
| 4 | Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid b | US | 7,936,014 |
| 5 | LDMOS with double LDD and trenched drain | US | 7,898,026 |
| 6 | Trench MOSFET with trench source contact having copper wire bonding | US | 7,847,346 |
| 7 | Trench MOSFET structures using three masks process | US | 8,058,685 |
| 8 | Trench MOSFET structure having improved avalanche capability using three masks process | US | 7,816,720 |
| 9 | Power semiconductor devices integrated with clamp diodes sharing same gate metal pad | US | 8,164,162 |
| 10 | MOSFET sturcture with guard ring | US | 8,164,139 |
| 11 | Semiconductor devices with gate-source ESD diode and gate-drain clamp diode | US | 8,164,114 |
| 12 | Avalanche capability improvement in power semiconductor devices having dummy cells around edge of ar | US | 8,072,000 |
| 13 | Super-junction trench MOSFET with resurf step oxide and the method to make the same | US | 8,067,800 |
| 14 | Metal schemes of trench MOSFET for copper bonding | US | 7,786,528 |
| 15 | Method of manufacturing a trench MOSFET having trench contacts integrated with trench Schottky recti | US | 8,034,686 |
| 16 | Trenched MOSFET with guard ring and channel stop | US | 8,030,702 |
| 17 | MOSFET-Schottky rectifier-diode integrated circuits with trench contact structures for device shrink | US | 8,004,036 |
| 18 | Trench MOSFET with double epitaxial structure | US | 8,159,021 |
| 19 | Trenched MOSFET device configuration with reduced mask processes | US | 7,612,407 |
| 20 | Device configuration and method to manufacture trench MOSFET with solderable front metal | US | 7,646,058 |