公司簡介
美國專利-5
| No. | Patent Name | Country | Patent No. |
|---|---|---|---|
| 1 | Trenched MOSFETS with improved gate-drain (GD) clamp diodes | US | 8,389,354 |
| 2 | Trench metal oxide semiconductor field effect transistor with embedded schottky rectifier using reduced masks process | US | 8,723,317 |
| 3 | Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structures | US | 8,022,471 |
| 4 | Closed trench MOSFET with floating trench rings as termination | US | 7,800,185 |
| 5 | Trenched MOSFET device with trenched contacts | US | 7,816,729 |
| 6 | Trench MOSFET with cell layout, ruggedness, truncated corners | US | 7,812,409 |
| 7 | Trench MOSFET with Implanted Drift Region | US | 7,633,121 |
| 8 | METHODS FOR MANUFACTURING TRENCH MOSFET WITH IMPLANTED DRIFT REGION | US | 8,461,001 |
| 9 | Closed trench MOSFET with floating trench rings as termination | US | 7,800,185 |
| 10 | Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up | US | 8,058,670 |
| 11 | Metal-oxide-semiconductor device | US | 11,056,488 |