公司簡介
美國專利-2
| No. | Patent Name | Country | Patent No. |
|---|---|---|---|
| 1 | Method for manufacturing a Super-junction structures having implanted regions surrounding an n epitaxial layer in deep trench |
US | 9,530,867 |
| 2 | Super-junction structures having implanted regions surrounding an n epitaxial layer in deep trench |
US | 9,099,320 |
| 3 | METHOD OF MAKING A TRENCH MOSFET HAVING IMPROVED AVALANCHE CAPABILITY USING THREE MASKS PROCESS | US | 8,222,108 |
| 4 | Super-junction trench MOSFETs with short terminations |
US | 8,999,789 |
| 5 | Trench MOSFET with improved trench gate contact | US | 8,269,273 |
| 6 | Super-junction trench MOSFETs with short terminations |
US | 9,000,515 |
| 7 | Avalanche capability improvement in power semiconductor devices using three masks process |
US | 9,018,701 |
| 8 | Ldmos With Double Ldd And Trenched Drain | US | 8,314,000 |
| 9 | SUPER-JUNCTION TRENCH MOSFET HAVING DEEP TRENCHES WITH BURIED VOIDS | US | 8,575,690 |
| 10 | 屏蔽閘極金氧半場效應電晶體及其製造方法(Shielded gate MOSFET and fabricating method thereof) |
US | 10,700,175 |
| 11 | Trench Mosfet Having Floating Dummy Cells For Avalanche Improvement | US | 8,680,610 |
| 12 | TRENCH MOSFET WITH TRENCHED FLOATING GATES HAVING THICK TRENCH BOTTOM OXIDE AS TERMINATION | US | 8,759,910 |
| 13 | Super-junction trench Mosfet structure |
US | 9,293,527 |
| 14 | SEMICONDUCTOR POWER DEVICE HAVING WIDE TERMINATION TERNCH AND SELF-ALIGNED SOURCE REGIONS FOR MASK SAVING | US | 8,686,468 |
| 15 | TRENCH METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH MULTIPLE TRENCHED SOURCE-BODY CONTACTS FOR REDUCING GATE CHARGE | US | 8,704,297 |
| 16 | TRENCH MOSFET LAYOUT WITH TRENCHED FLOATING GATES AND TRENCHED CHANNEL STOP GATES IN TERMINATION | US | 8,487,372 |
| 17 | TRENCH METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH EMBEDDED SCHOTTKY RECTIFIER USING REDUCED MASKS PROCESS | US | 8,723,317 |
| 18 | FAST SWITCHING LATERAL INSULATED GATE BIPOLAR TRANSISTOR (LIGBT) WITH TRENCHED CONTACTS | US | 8,598,624 |
| 19 | METHOD FOR MANUFACTURING A POWER SEMICONDUCTOR DEVICE | US | 8,563,381 |
| 20 | AVALANCHE CAPABILITY IMPROVEMENT IN POWER SEMICONDUCTOR DEVICES | US | 8,384,194 |