力士科技股份有限公司

Using short-channel technology to design MOSFET & IGBT products will increase the cell density from 400M/in² to 900M/in²~2000M/in². This innovated design will lower the chip size by 30% or above, without effecting the electrical characteristics of the original product.
Shallow Trench MOSFET process lowers the Qgd/Qgs ratio <1, which can prevent the occurrence of “Shoot Through Effect”.
Force-MOS wafer focuses on self-designed, exclusive technology, and pass on the design to our cooperating wafer fab for production. With our CEO Dr. Hsieh, who is a professional expert in this field, supervising and revising the process, we are in total control of improving product yielding rate and shortening production period. Most of our competitors, because they purchase their wafer from other places, have difficulties managing both production quality and period.
In comparison with majority of other competitors, Force-MOS adopts the most advanced 8” wafer and 0.18µm MP process while others are still using 6” wafer and 0.35/0.25µm process. Thus gives us an advantage on cost control
Adopts the most simplified process with product yielding rate guaranteed at >95%
Ability to develop better performance products according to customer’s electric requirement of their layout design
Developed the MSD patent, and integrate MOSFET, Schottky, ESD Diode all together. Hence not only our technology is more advance, but we can meet customer’s application requirement
Complete development on MP for the lowest RDS(ON) products in the business (RDS(ON) =1.6mΩ(Max.), 1.2mΩ(Typ.) ); which increase the efficiency and lower the power consumption.
Has complete planned out 0.13µm process for product lines
Has already applied for 10 patent items for MOSFET/IGBT process and components
Has already applied for 60 patent items in US, Taiwan, and China. Has successfully acquired 3 US patents, plus 112 patent rights owned by our CEO Dr. Hsieh personally
Self-design process with the adoption of VIS’s 0.25/0.18/0.13 µm process, which contain all around application in low/mid/high voltage area
Consistently expanding our market area, and develop/design products to meet industry’s application requirement. Product lines currently include Analog IC, MOSFET, Schottky diode, and other passive component, and has reached most efficient management and application
Force-MOS include the best design and process integration team for MOSFET and analog IC. In case of shifting on market trend, we can react and support immediately.